SISS-25 (18-19 June, 2026@Tokyo)

SISS-25 at Seikei University (On-Site Event)

The 25th Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS-25) will be held June 18 (Thu) – 19 (Fri), 2026, at Seikei University in Tokyo, Japan.

SISS-25 covers the latest studies in SIMSlaser SNMSatom probe tomography (APT)mass spectrometry (MS) and ion beams.

* SISS supports the presentations of young scientists and runs a travel support.

Invited Speakers

We are honored to welcome many excellent invited speakers for SISS-25, as listed below. 

・Jean-Nicolas Audinot (Luxembourg Institute of Science and Technology) “Next-Generation FIB-SIMS: From High-Brightness Sources to Hyperspectral Nanoscale Imaging”

・Masaki Hachiya (FUJIFILM Corporation) “Surface analysis of practical materials using Ar-GCIB and TOF-SIMS”

・Yutaka Hoshina (Sumitomo Electric Industries, Ltd.)  “Information Extraction from Surface Analysis Data Using Probabilistic Models”

・Michał Kański (Jagiellonian University in Kraków)  “Modelling Water Cluster Ion Beams with Combined Molecular Dynamics/Monte Carlo Approach”

・Yi Keewook (Korea Basic Science Institute) “Towards full-scale and full-dimension mass spectrometry: application of high-resolution SIMS in Geosciences”

・Nick Lockyer (Manchester University) “Post-ionisation techniques in surface analysis – lessons learned and future prospects”

・Masashi Nojima (Tokyo University of Science)  “Generation of Mass-Selected Ion Beams via a Two-Stage Rotating Electric-Field Mass Separation Technique”

・Tetsuo Sakamoto (Kogakuin University) “Recent advances of resonant laser SNMS for isotope analysis”

・Kentaro Terada (Osaka University) “Development of Post-Ionization SNMS — Toward New Frontiers in Earth and Space Sciences —”

・Markus Terhorst (IONTOF  GmbH) “Sputtered Neutral Mass Spectrometry: Fundamentals and Applications”

・Nunzio Tuccitto (University of Catania) “Automated ToF-SIMS Data Treatment and Physics-Guided Machine Learning for Assisted Interpretation of Depth Profiles in Beam-Sensitive Materials”

・Florian Vogel (South China University of Technology) “Exploring avenues for modulating hierarchical architectures in high-temperature structural materials”


・Yanyan Zhang (Chinese Academy of Sciences)  “Invention of in situ variable-temperature liquid SIMS for probing electrolytes at subzero temperatures”

Registration Fee

Early payment (via PayPal): before June 8th
Regular: 10,000 JPY
Student: 2,000 JPY

Banquet Fee: 3,000 JPY (students: 2,000 JPY)
Separate from the registration fee

On-site payment (cash only):
Regular: 12,000 JPY
Student: 3,000 JPY

Online payments are accepted via PayPal only. Registration will open in March.

We have a support program for Young Oral Presenters at SISS-25. Young researchers whose oral presentations are accepted through competitive review will receive 30,000 yen for domestic travel or 50,000 yen for international travel. Please select your preference for Young Researcher Support on the abstract submission form.

Abstract submission

Deadline for
Oral presentation: 31 March 2026
Poster presentation: 31 March 2026

When applying for an oral or poster presentation, please complete the following page.

Abstract template Download
Abstract template

/Abstract Submission

Venue:

Seikei University, Tokyo, Japan
University Building No.11, 3rd Floor
Access and Campus Map
· Note: SISS-25 will be held in On-site format.

投稿者: sims-siss2025

The Scientific International Symposium on SIMS and Related Techniques Based on Ion-Solid Interactions (SISS). SISS initially stood for “Seikei University, the International Symposium on SIMS and related techniques based on ion-solid interactions”. Scope: SISS covers SIMS and related techniques based on ion-solid interactions: fundamentals, instrumentation, and application in various fields, such as semiconductors, industrial materials, biological, medical, and environmental sciences. We mainly have three sessions: Atom Probe, D-SIMS, and TOF-SIMS.